PART |
Description |
Maker |
AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010- |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 150 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 200 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 CMOS Dual Binary Up-Counter 16-TSSOP -55 to 125 CMOS Dual Binary Up-Counter 16-SO -55 to 125 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
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ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc.
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AM28F020 AM28F020-120EC AM28F020-120ECB AM28F020-1 |
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory
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AMD[Advanced Micro Devices]
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AM28F256A-120EC AM28F256A-120ECB AM28F256A-120EE A |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
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Advanced Micro Devices
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AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail 16-Megabit097152*8-bit)CMOS 5.0 Volt-only,sector Erase Flash memory LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1 LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位)CMOS 5.0伏只,扇区擦除闪 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
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Advanced Micro Devices, Inc. SPANSION LLC
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28F256 M28F256-90C1TR M28F256-90C3TR M28F256-90C6T |
Octal D-Type Transparent Latches With 3-State Outputs 20-SOIC 0 to 70 256K2K的8,芯片擦除)闪存 Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP 0 to 70 256K32K的8,芯片擦除)闪存 256K(32K x8, Chip Erase)FLASH MEMORY 256K2K的8,芯片擦除)闪存 KAPTON STRAP F/GLASS TUBE PKG/5 Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC 0 to 70 Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SO 0 to 70 Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-PDIP 0 to 70 256K(32K x8 / Chip Erase)FLASH MEMORY 512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M28F512-12B1 M28F512-12C1 M28F512-10C1 28F256 M28F |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory 512千位4Kb的x8整体擦除)Flasxh内存
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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AM29F040 AM29F040-120EI AM29F040-120FC AM29F040-12 |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDSO32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
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Advanced Micro Devices, Inc. SPANSION LLC
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AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V,CMOS 512K位整体擦除闪速存储器) IC-512K FLASH MEMORY 4-bit magnitude comparators 16-PDIP 0 to 70 Quad 2-input exclusive-OR gates 14-PDIP 0 to 70 Decade Counter 14-SOIC 0 to 70 Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70 Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70 Quad bistable latches 16-SOIC 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70 4-bit magnitude comparators 16-SOIC 0 to 70 Quad bistable latches 16-PDIP 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70 8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32 Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 ER 14C 14#16 PIN RECP LINE 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
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Advanced Micro Devices, Inc. PROM ADVANCED MICRO DEVICES INC SPANSION LLC
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A29L008UV-90 A29L008TV-90U A29L008TV-90 A29L008TV- |
90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory 1M X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory From old datasheet system
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AMICC[AMIC Technology]
|
29LV160B |
16 Megabit CMOS 3 Volt-only Sector Erase Flash Memory
|
AMD
|
BM29F400T 29F400B-12PC 29F400B-12PI 29F400B-12TC 2 |
4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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ETC[ETC]
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